Structural evolution of GaN during initial stage MOCVD growth

Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD

The growth evolution of hexagonal GaN pyramids are investigated under various growth conditions. The hexagonal GaN pyramids were grown by hot-wall metal organic chemical vapor deposition – process (hot-wall MOCVD) on a (0001) oriented GaN template. We concluded the growth of the hexagonal GaN pyramids can be divided into two different regimes defined by the adsorption kinetics of the {1101} sur...

MOCVD growth of GaN-based high electron mobility transistor structures

THE STRUCTURAL EVOLUTION OF LELY SEEDS DURING THE INITIAL STAGES OF SiC SUBLIMATION GROWTH

The as-grown surfaces of 6H SiC seed crystals grown by the Lely method have been characterized by visible light microscopy and atomic force microscopy. The surfaces were then used to seed the sublimation growth of SiC at 2300'C, in 650 torr of Ar, with a gradient of 8 °C/cm. Repeated observations of the seed surface structure after predetermined intervals in the growth reactor demonstrated that...

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8mm 5mm, XRD GaN (0 0 0 2) full-width at half-...

A kinetic Study of the MOCVD of GaN

Quantum chemistry investigations have been performed to study the gas phase chemistry active during the MOVPE of GaN when Ga(CH3)3 and NH3, diluted in a H2 carrier gas, are used as precursors. Optimized molecular geometries, energies, and transition state structures of gas phase species have been determined with density functional theory at the B3LYP/6-311+G(d,p) level. We found that the GaN ga...